SI2312CDS-T1-GE3 datasheet

О ДАТАШИТЕ

Маркировка

SI2312CDS-T1-GE3
Производитель

Siliconix
Описание

Vishay Intertechnology SI2312CDS-T1-GE3 Current - Continuous Drain (id) @ 25?° C: 6A Drain Source Voltage Vds: 20V Drain To Source Voltage (vdss): 20V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 18nC @ 5V ID_COMPONENTS: 2668227 Input Capacitance (ciss) @ Vds: 865pF @ 10V Mounting Type: Surface Mount On Resistance Rds(on): 26500?‚?µohm Operating Temperature Range: -55?‚?°C To +150?‚?°C Package / Case: SOT-23-3, TO-236-3, Micro3?„?, SSD3, SST3 Power - Max: 2.1W Rds On (max) @ Id, Vgs: 31.8 mOhm @ 5A, 4.5V Rds(on) Test Voltage Vgs: 4.5V Rohs Compliant: Yes Series: TrenchFET?® Transistor: RoHS Compliant Transistor Case Style: SOT-23 Transistor Polarity: N Channel Vgs(th) (max) @ Id: 1V @ 250?µA Voltage Vgs Max: 8V RoHS: yes Drain-Source Breakdown Voltage: 20 V Continuous Drain Current: 6 A Resistance Drain-Source RDS (on): 0.0265 Ohms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Forward Transconductance gFS (Max / Min): 24 S Gate Charge Qg: 12 nC Minimum Operating Temperature: - 55 C Power Dissipation: 2.1 W Part # Aliases: SI2312CDS-GE3 Other Names: SI2312CDS-T1-GE3TR
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10 шт.
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